参数项参数值
参数项参数值
Forward Transconductance - Min5.5 S
TechnologySi
ConfigurationSingle
Id - Continuous Drain Current5 A
Transistor PolarityP-Channel
Vgs th - Gate-Source Threshold Voltage1.2 V
Rds On - Drain-Source Resistance27 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time70 ns
Vgs - Gate-Source Voltage- 8 V, + 8 V
MXHTS85412999
Typical Turn-On Delay Time11 ns
KRHTS8541299000
CNHTS8541290000
Qg - Gate Charge10.4 nC
ImageROHM Semiconductor RQ6C050BCTCR
Package / CaseSOT-457-6
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
CAHTS8541290000
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
JPHTS8541290100
RoHS Details
Fall Time65 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
BrandROHM Semiconductor
Unit Weight0.008861 oz
SubcategoryMOSFETs
Product CategoryMOSFET
Factory Pack Quantity3000
Product TypeMOSFET
ManufacturerROHM Semiconductor
Pd - Power Dissipation1.25 W
Part # AliasesRQ6C050BC
USHTS8541290095
DescriptionMOSFET Pch -20V -5A Si MOSFET
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels1 Channel
Rise Time32 ns