参数项参数值
参数项参数值
ConfigurationSingle
Id - Continuous Drain Current2.5 A
Transistor PolarityP-Channel
TechnologySi
Height0.85 mm
Rds On - Drain-Source Resistance72 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time40 ns
Width1.6 mm
Vgs - Gate-Source Voltage- 12 V, + 12 V
MXHTS85412999
Typical Turn-On Delay Time12 ns
Package / CaseSOT-457T-6
Length2.9 mm
Minimum Operating Temperature- 55 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
KRHTS8541299000
CAHTS8541290000
RoHS Details
JPHTS8541290100
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
ProductMOSFET Small Signal
Channel ModeEnhancement
CNHTS8541290000
ImageROHM Semiconductor RTQ025P02TR
SubcategoryMOSFETs
TARIC8541290000
Product CategoryMOSFET
DescriptionMOSFET P-CH 20V 2.5A TSMT6
BrandROHM Semiconductor
Factory Pack Quantity3000
Fall Time20 ns
ManufacturerROHM Semiconductor
SeriesRTQ025P02
Product TypeMOSFET
USHTS8541290095
Part # AliasesRTQ025P02
Pd - Power Dissipation1.25 W
TypeMOSFET
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels1 Channel
Rise Time20 ns