参数项参数值
参数项参数值
Gain Bandwidth Product fT150 MHz
Collector- Base Voltage VCBO- 45 V
Maximum DC Collector Current- 2 A
Collector- Emitter Voltage VCEO Max- 45 V
TechnologySi
ConfigurationSingle
Transistor PolarityPNP
Collector-Emitter Saturation Voltage- 500 mV
Emitter- Base Voltage VEBO- 5 V
Width2.5 mm
Length4.5 mm
Height1.5 mm
MXHTS85412999
ImageDiodes Incorporated BCX5116TA
KRHTS8541299000
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
Package / CaseSOT-89-3
Minimum Operating Temperature- 65 C
CAHTS8541290000
CNHTS8541290000
PackagingReel
PackagingCut Tape
PackagingMouseReel
TARIC8541290000
RoHS Details
Pd - Power Dissipation1000 mW
DescriptionBipolar Transistors - BJT Pwr Mid Perf Transistor SOT89 T&R 1K
SeriesBCX5116
BrandDiodes Incorporated
Product TypeBJTs - Bipolar Transistors
Factory Pack Quantity1000
SubcategoryTransistors
ManufacturerDiodes Incorporated
Product CategoryBipolar Transistors - BJT
USHTS8541290095
Moisture Sensitivity Level1 (Unlimited)