参数项参数值
参数项参数值
TechnologySi
Id - Continuous Drain Current2 A
ConfigurationSingle
Transistor PolarityN-Channel
Vgs th - Gate-Source Threshold Voltage3 V
Rds On - Drain-Source Resistance4.3 Ohms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time20.5 ns
Vgs - Gate-Source Voltage- 30 V, + 30 V
QualificationAEC-Q101
Typical Turn-On Delay Time8.5 ns
PackagingCut Tape
PackagingReel
Qg - Gate Charge3.4 nC
ImageSTMicroelectronics STD3N95K5AG
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
Package / CaseTO-252-3
Minimum Operating Temperature- 55 C
Fall Time32.5 ns
Unit Weight0.011640 oz
SeriesSTD3N95K5AG
Pd - Power Dissipation45 W
DescriptionMOSFET PTD HIGH VOLTAGE
BrandSTMicroelectronics
Product TypeMOSFET
Factory Pack Quantity2500
SubcategoryMOSFETs
Vds - Drain-Source Breakdown Voltage950 V
ManufacturerSTMicroelectronics
Product CategoryMOSFET
Number of Channels1 Channel
Rise Time13.5 ns
TradenameMDmesh
Moisture Sensitivity Level1 (Unlimited)