在线商城 
RQ3E100BNTB
厂牌：ROHM(罗姆)
包装：REEL 1
类目：元器件 > 分立器件 > MOSFET
编号：B000053281319
描述：MOSFET 4.5V Drive Nch MOSFET
商品参数
参数项参数值
参数项参数值
ConfigurationSingle
Id - Continuous Drain Current13.5 A
Transistor PolarityN-Channel
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Rds On - Drain-Source Resistance7.7 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time44 ns
Vgs - Gate-Source Voltage- 20 V, + 20 V
MXHTS85412999
Typical Turn-On Delay Time10 ns
Package / CaseHSMT-8
PackagingCut Tape
PackagingMouseReel
PackagingReel
KRHTS8541299000
RoHS Details
JPHTS8541290100
CAHTS8541290000
Mounting StyleSMD/SMT
Qg - Gate Charge22 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
CNHTS8541290000
ImageROHM Semiconductor RQ3E100BNTB
SubcategoryMOSFETs
TARIC8541290000
Product CategoryMOSFET
BrandROHM Semiconductor
Unit Weight0.196723 oz
DescriptionMOSFET 4.5V Drive Nch MOSFET
Fall Time10 ns
Factory Pack Quantity3000
ManufacturerROHM Semiconductor
Product TypeMOSFET
USHTS8541290095
Part # AliasesRQ3E100BN
Pd - Power Dissipation15 W
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time28 ns
Moisture Sensitivity Level1 (Unlimited)