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FDC655BN
厂牌：ON(安森美)
包装：REEL 1
类目：元器件 > 分立器件 > MOSFET
编号：B000053281548
描述：Trans MOSFET N-CH 30V 6.3A 6-Pin SuperSOT T/R
商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min20 S
TechnologySi
ConfigurationSingle
Id - Continuous Drain Current6.3 A
Transistor PolarityN-Channel
Rds On - Drain-Source Resistance25 MOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time22 ns
Vgs - Gate-Source Voltage- 20 V, + 20 V
MXHTS85412999
Typical Turn-On Delay Time8 ns
Width1.6 mm
KRHTS8541299000
Height1.1 mm
JPHTS8541290100
Length2.9 mm
CNHTS8541290000
CAHTS8541290000
Qg - Gate Charge13 nC
Product TypeMOSFET
Package / CaseSSOT-6
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
Mounting StyleSMD/SMT
Minimum Operating Temperature- 55 C
ProductMOSFET Small Signal
PackagingCut Tape
PackagingMouseReel
PackagingReel
Fall Time4 ns
TARIC8541290000
BrandON Semiconductor / Fairchild
SeriesFDC655BN
Unit Weight0.001058 oz
Factory Pack Quantity3000
RoHS Details
ImageON Semiconductor / Fairchild FDC655BN
Product CategoryMOSFET
Pd - Power Dissipation1.6 W
Part # AliasesFDC655BN_NL
TypeMOSFET
ManufacturerON Semiconductor
SubcategoryMOSFETs
USHTS8541290095
Vds - Drain-Source Breakdown Voltage30 V
DescriptionMOSFET SINGLE NCH LOG LVEL PWR TRENCH MOSFET
TradenamePowerTrench
Number of Channels1 Channel
Rise Time4 ns
Moisture Sensitivity Level1 (Unlimited)