参数项参数值
参数项参数值
DC Current Gain hFE Max150
Gain Bandwidth Product fT130 MHz
Collector- Base Voltage VCBO120 V
Maximum DC Collector Current2 A
Collector- Emitter Voltage VCEO Max120 V
Continuous Collector Current1 A
TechnologySi
ConfigurationSingle
Transistor PolarityNPN
Collector-Emitter Saturation Voltage500 mV
Emitter- Base Voltage VEBO5 V
DC Collector/Base Gain hfe Min150 at 400 mA, 2 V
Width3.7 mm
Height1.65 mm
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Length6.7 mm
Product CategoryBipolar Transistors - BJT
Package / CaseSOT-223-4
Mounting StyleSMD/SMT
PackagingMouseReel
PackagingReel
PackagingCut Tape
RoHS Details
SeriesFZT694
Unit Weight0.003951 oz
BrandDiodes Incorporated
ImageDiodes Incorporated FZT694BTA
ManufacturerDiodes Incorporated
Product TypeBJTs - Bipolar Transistors
Factory Pack Quantity1000
SubcategoryTransistors
DescriptionBipolar Transistors - BJT NPN High Gain & Crnt