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IPB072N15N3G
厂牌：Infineon(英飞凌)
包装：REEL 1
类目：元器件 > 分立器件 > MOSFET
编号：B000053288641
描述：MOSFET N-CH 150V 100A TO263-3
商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min65 S
TechnologySi
ConfigurationSingle
Id - Continuous Drain Current100 A
Transistor PolarityN-Channel
Vgs th - Gate-Source Threshold Voltage2 V
Rds On - Drain-Source Resistance7.2 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time46 ns
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time25 ns
CAHTS8541290000
Height4.4 mm
Minimum Operating Temperature- 55 C
Width9.25 mm
Length10 mm
Maximum Operating Temperature+ 175 C
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge70 nC
SubcategoryMOSFETs
Product CategoryMOSFET
JPHTS8541290100
Package / CaseTO-263-3
Channel ModeEnhancement
Mounting StyleSMD/SMT
CNHTS8541290000
Fall Time14 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
RoHS Details
TARIC8541290000
ImageInfineon Technologies IPB072N15N3 G
Unit Weight0.139332 oz
SeriesOptiMOS 3
Factory Pack Quantity1000
Pd - Power Dissipation300 W
Product TypeMOSFET
DescriptionMOSFET N-Ch 150V 100A D2PAK-2 OptiMOS 3
ManufacturerInfineon
BrandInfineon Technologies
Part # AliasesIPB72N15N3GXT SP000386664 IPB072N15N3GATMA1
Vds - Drain-Source Breakdown Voltage150 V
TradenameOptiMOS
USHTS8541290095
Number of Channels1 Channel
Rise Time35 ns