参数项参数值
参数项参数值
Forward Transconductance - Min0.56 S
ConfigurationSingle
Transistor PolarityP-Channel
Vgs th - Gate-Source Threshold Voltage700 mV
TechnologySi
Rds On - Drain-Source Resistance600 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time11.2 ns
Vgs - Gate-Source Voltage- 12 V, + 12 V
Height1.02 mm
Width1.4 mm
Length3.04 mm
Typical Turn-On Delay Time2.9 ns
Mounting StyleSMD/SMT
MXHTS85412101
CNHTS8541210000
ProductMOSFET Small Signal
KRHTS8541219000
Qg - Gate Charge3.5 nC
JPHTS8541210101
Package / CaseSOT-23-3
CAHTS8541210000
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
PackagingMouseReel
PackagingReel
PackagingCut Tape
SeriesZXM61P02
Channel ModeEnhancement
Product TypeMOSFET
ManufacturerDiodes Incorporated
DescriptionMOSFET 20V P-Chnl HDMOS
TARIC8541210000
Factory Pack Quantity3000
BrandDiodes Incorporated
ImageDiodes Incorporated ZXM61P02FTA
Product CategoryMOSFET
Fall Time10.1 ns
RoHS Details
SubcategoryMOSFETs
Unit Weight0.000282 oz
Pd - Power Dissipation806 mW
USHTS8541210095
TypeMOSFET
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels1 Channel
Rise Time6.7 ns
Moisture Sensitivity Level1 (Unlimited)