参数项参数值
参数项参数值
DC Current Gain hFE Max270
Gain Bandwidth Product fT210 MHz
Collector- Base Voltage VCBO60 V
Maximum DC Collector Current6 A
Collector- Emitter Voltage VCEO Max60 V
Continuous Collector Current2 A
TechnologySi
ConfigurationSingle
Transistor PolarityNPN
Collector-Emitter Saturation Voltage0.13 V
Emitter- Base Voltage VEBO6 V
DC Collector/Base Gain hfe Min45
CAHTS8541290000
Height1.5 mm
Width2.5 mm
Maximum Operating Temperature+ 150 C
Length4.5 mm
MXHTS85412999
KRHTS8541299000
SubcategoryTransistors
Product CategoryBipolar Transistors - BJT
JPHTS8541290100
Package / CaseSOT-89-3
Mounting StyleSMD/SMT
CNHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
RoHS Details
TARIC8541290000
ImageROHM Semiconductor 2SD2391T100Q
Unit Weight0.004603 oz
Series2SD2391
Factory Pack Quantity1000
Pd - Power Dissipation2 W
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT NPN 60V 2A
BrandROHM Semiconductor
ManufacturerROHM Semiconductor
USHTS8541290075
Moisture Sensitivity Level1 (Unlimited)