参数项参数值
参数项参数值
Forward Transconductance - Min6 S
TechnologySi
ConfigurationSingle
Id - Continuous Drain Current300 mA
Vgs th - Gate-Source Threshold Voltage2.4 V
Transistor PolarityP-Channel
Rds On - Drain-Source Resistance2.4 Ohms
Typical Turn-Off Delay Time31.8 ns
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time9.86 ns
Mounting StyleSMD/SMT
Minimum Operating Temperature- 55 C
Qg - Gate Charge1.2 nC
Factory Pack Quantity10000
Package / CaseSOT-23-3
Channel ModeEnhancement
Maximum Operating Temperature+ 150 C
Fall Time21.9 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
Unit Weight0.000282 oz
ImageDiodes Incorporated DMP32D4S-13
Pd - Power Dissipation540 mW
SeriesDMP32
RoHS Details
BrandDiodes Incorporated
ManufacturerDiodes Incorporated
Product CategoryMOSFET
Vds - Drain-Source Breakdown Voltage30 V
Product TypeMOSFET
Number of Channels1 Channel
DescriptionMOSFET P-Ch ENH FET -30V 2.4Ohm -10V -300mA
SubcategoryMOSFETs
Rise Time11.5 ns