参数项参数值
参数项参数值
DC Current Gain hFE Max300
Gain Bandwidth Product fT300 MHz
Collector- Base Voltage VCBO75 V
Maximum DC Collector Current0.6 A
Collector- Emitter Voltage VCEO Max40 V
Continuous Collector Current0.6 A
ConfigurationSingle
Transistor PolarityNPN
TechnologySi
Emitter- Base Voltage VEBO6 V
Height0.8 mm
Collector-Emitter Saturation Voltage1 V
DC Collector/Base Gain hfe Min35
JPHTS8541290100
Length2 mm
CAHTS8541290000
MXHTS85412999
Width1.25 mm
KRHTS8541299000
RoHS Details
PackagingCut Tape
PackagingMouseReel
PackagingReel
USHTS8541290095
Product TypeBJTs - Bipolar Transistors
Mounting StyleSMD/SMT
Package / CaseSOT-323-3
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CNHTS8541210000
SubcategoryTransistors
TARIC8541290000
Factory Pack Quantity3000
ImageROHM Semiconductor UMT2222AT106
SeriesUMT2222A
BrandROHM Semiconductor
Product CategoryBipolar Transistors - BJT
Unit Weight0.000176 oz
ManufacturerROHM Semiconductor
DescriptionBipolar Transistors - BJT NPN 40V 0.6A
Part # AliasesUMT2222A
Pd - Power Dissipation200 mW
Moisture Sensitivity Level1 (Unlimited)