参数项参数值
参数项参数值
Gain Bandwidth Product fT140 MHz
Collector- Base Voltage VCBO80 V
ConfigurationSingle
Maximum DC Collector Current6 A
Collector- Emitter Voltage VCEO Max30 V
Continuous Collector Current6 A
Transistor PolarityNPN
TechnologySi
Emitter- Base Voltage VEBO7 V
Width2.48 mm
Height1.5 mm
Length4.5 mm
MXHTS85412999
Factory Pack Quantity1000
CNHTS8541290000
KRHTS8541299000
BrandDiodes Incorporated
SubcategoryTransistors
Package / CaseSOT-89-3
Mounting StyleSMD/SMT
CAHTS8541290000
JPHTS8541290100
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingReel
PackagingMouseReel
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT 30V NPN Low Sat
ImageDiodes Incorporated ZXTN2007ZTA
SeriesZXTN2007
TARIC8541290000
ManufacturerDiodes Incorporated
Product CategoryBipolar Transistors - BJT
RoHS Details
Pd - Power Dissipation2100 mW
USHTS8541290075