参数项参数值
参数项参数值
DC Current Gain hFE Max250
Gain Bandwidth Product fT200 MHz
Collector- Base Voltage VCBO80 V
Maximum DC Collector Current0.1 A
Collector- Emitter Voltage VCEO Max65 V
TechnologySi
ConfigurationSingle
Transistor PolarityPNP
Collector-Emitter Saturation Voltage650 mV
Emitter- Base Voltage VEBO5 V
DC Collector/Base Gain hfe Min125
Width1.35 mm
Length2.2 mm
Height1 mm
PackagingCut Tape
PackagingReel
PackagingMouseReel
MXHTS85412101
ImageDiodes Incorporated BC856AW-7-F
KRHTS8541219000
Mounting StyleSMD/SMT
JPHTS8541210101
Maximum Operating Temperature+ 150 C
Package / CaseSOT-323-3
CAHTS8541210000
Minimum Operating Temperature- 65 C
CNHTS8541210000
TARIC8541210000
Unit Weight0.000176 oz
RoHS Details
SeriesBC856A
Pd - Power Dissipation200 mW
DescriptionBipolar Transistors - BJT PNP BIPOLAR
BrandDiodes Incorporated
Product TypeBJTs - Bipolar Transistors
Factory Pack Quantity3000
SubcategoryTransistors
ManufacturerDiodes Incorporated
Product CategoryBipolar Transistors - BJT
USHTS8541210095