STP18N60M2

厂牌：ST(意法半导体)

包装：TUBE 1

类目：元器件 > 分立器件 > MOSFET

编号：B000053294601

描述：Single N-Channel 600 V 110 W 13 A 0.28 Ω Flange Mount Power MOSFET - TO-220-3

商品参数

参数项参数值

ConfigurationSingle

Id - Continuous Drain Current13 A

Transistor PolarityN-Channel

Vgs th - Gate-Source Threshold Voltage3 V

TechnologySi

Rds On - Drain-Source Resistance255 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time47 ns

Vgs - Gate-Source Voltage- 25 V, + 25 V

Typical Turn-On Delay Time12 ns

Mounting StyleThrough Hole

MXHTS85412999

KRHTS8541299000

Qg - Gate Charge21.5 nC

Package / CaseTO-220-3

JPHTS8541290100

CAHTS8541290000

Maximum Operating Temperature+ 150 C

Minimum Operating Temperature- 55 C

CNHTS8541210000

RoHS Details

ImageSTMicroelectronics STP18N60M2

TARIC8541290000

Channel ModeEnhancement

BrandSTMicroelectronics

Product TypeMOSFET

PackagingTube

ManufacturerSTMicroelectronics

SubcategoryMOSFETs

SeriesSTP18N60M2

Fall Time10.6 ns

USHTS8541290095

Unit Weight0.011640 oz

Factory Pack Quantity1000

Product CategoryMOSFET

DescriptionMOSFET N-CH 600V 0.255Ohm 13A MDmesh M2

Pd - Power Dissipation110 W

Vds - Drain-Source Breakdown Voltage600 V

Number of Channels1 Channel

Rise Time9 ns