参数项参数值
参数项参数值
DC Current Gain hFE Max560
Gain Bandwidth Product fT400 MHz
Collector- Base Voltage VCBO20 V
Maximum DC Collector Current200 mA
Collector- Emitter Voltage VCEO Max20 V
Continuous Collector Current200 mA
TechnologySi
ConfigurationSingle
Transistor PolarityNPN
Collector-Emitter Saturation Voltage120 mV
Emitter- Base Voltage VEBO5 V
DC Collector/Base Gain hfe Min120
CAHTS8541290000
MXHTS85412999
Maximum Operating Temperature+ 150 C
KRHTS8541299000
SubcategoryTransistors
Product CategoryBipolar Transistors - BJT
DescriptionBipolar Transistors - BJT NPN General Purpose Amplification Transistor
ManufacturerROHM Semiconductor
Package / CaseSOT-723-3
Mounting StyleSMD/SMT
JPHTS8541290100
CNHTS8541210000
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageROHM Semiconductor 2SCR522MT2L
Unit Weight0.001034 oz
TARIC8541290000
RoHS Details
Series2SCR522M
Product TypeBJTs - Bipolar Transistors
Factory Pack Quantity8000
Pd - Power Dissipation150 mW
Part # Aliases2SCR522M
BrandROHM Semiconductor
USHTS8541290095
Moisture Sensitivity Level1 (Unlimited)