参数项参数值
参数项参数值
Maximum Gate Emitter Voltage20 V
Collector- Emitter Voltage VCEO Max1.2 kV
TechnologySi
ConfigurationSingle
Collector-Emitter Saturation Voltage1.7 V
Width5.31 mm
MXHTS85412999
QualificationAEC-Q101
Height20.7 mm
Length15.87 mm
RoHS Details
KRHTS8541299000
CNHTS8541290000
ImageInfineon / IR AUIRG4PH50S
Package / CaseTO-247-3
Mounting StyleThrough Hole
CAHTS8541290000
Minimum Operating Temperature- 55 C
JPHTS8541290100
PackagingTube
BrandInfineon / IR
TARIC8541290000
Factory Pack Quantity400
Product CategoryIGBT Transistors
SubcategoryIGBTs
Unit Weight1.340411 oz
Continuous Collector Current at 25 C57 A
Product TypeIGBT Transistors
ManufacturerInfineon
USHTS8541290095
DescriptionIGBT Transistors 1200V DC-1 KHZ (STD) DISCRETE AUTO IGBT