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FQD19N10LTM
厂牌：ON(安森美)
包装：REEL 1
类目：元器件 > 分立器件 > MOSFET
编号：B000053295089
描述：MOSFET N-CH 100V 15.6A DPAK
商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min14 S
TechnologySi
ConfigurationSingle
Id - Continuous Drain Current15.6 A
Transistor PolarityN-Channel
Rds On - Drain-Source Resistance100 MOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time20 ns
Vgs - Gate-Source Voltage- 20 V, + 20 V
MXHTS85412999
Typical Turn-On Delay Time14 ns
Width6.22 mm
KRHTS8541299000
Length6.73 mm
Minimum Operating Temperature- 55 C
CAHTS8541290000
Qg - Gate Charge18 nC
Product TypeMOSFET
Maximum Operating Temperature+ 150 C
Package / CaseTO-252-3
Channel ModeEnhancement
Mounting StyleSMD/SMT
JPHTS8541290100
PackagingCut Tape
PackagingMouseReel
PackagingReel
CNHTS8541290000
Fall Time140 ns
TARIC8541290000
BrandON Semiconductor / Fairchild
SeriesFQD19N10L
Unit Weight0.009184 oz
RoHS Details
Factory Pack Quantity2500
ImageON Semiconductor / Fairchild FQD19N10LTM
Product CategoryMOSFET
Pd - Power Dissipation2.5 W
ManufacturerON Semiconductor
TypeMOSFET
SubcategoryMOSFETs
USHTS8541290095
Vds - Drain-Source Breakdown Voltage100 V
DescriptionMOSFET 100V N-Ch QFET Logic Level
Number of Channels1 Channel
Rise Time410 ns