参数项参数值
参数项参数值
Forward Transconductance - Min249 S
TechnologySi
ConfigurationSingle
Id - Continuous Drain Current195 A
Transistor PolarityN-Channel
Vgs th - Gate-Source Threshold Voltage3.7 V
Rds On - Drain-Source Resistance2.6 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time180 ns
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time21 ns
CAHTS8541290000
Minimum Operating Temperature- 55 C
Height15.65 mm
Width4.4 mm
Length10 mm
Maximum Operating Temperature+ 175 C
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge271 nC
SubcategoryMOSFETs
Product CategoryMOSFET
JPHTS8541290100
Package / CaseTO-220-3
Channel ModeEnhancement
Mounting StyleThrough Hole
CNHTS8541290000
Fall Time115 ns
PackagingTube
RoHS Details
TARIC8541290000
ImageInfineon / IR IRFB7730PBF
Unit Weight0.211644 oz
Factory Pack Quantity1000
Pd - Power Dissipation375 W
Product TypeMOSFET
DescriptionMOSFET 75V Single N-Channel HEXFET Power
ManufacturerInfineon
BrandInfineon / IR
Vds - Drain-Source Breakdown Voltage75 V
TradenameStrongIRFET
USHTS8541290095
Number of Channels1 Channel
Rise Time120 ns