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BSC600N25NS3G
厂牌：Infineon(英飞凌)
包装：REEL 1
类目：元器件 > 分立器件 > MOSFET
编号：B000053295302
描述：MOSFET N-CH 250V 25A TDSON-8
商品参数
参数项参数值
参数项参数值
ConfigurationSingle
KRHTS8541299000
Forward Transconductance - Min25 S
JPHTS8541290100
Transistor PolarityN-Channel
Id - Continuous Drain Current25 A
Vgs th - Gate-Source Threshold Voltage2 V
TechnologySi
CAHTS8541290000
DescriptionMOSFET N-Ch 250V 25A TDSON-8 OptiMOS 3
ImageInfineon Technologies BSC600N25NS3 G
Rds On - Drain-Source Resistance50 MOhms
Transistor Type1 N-Channel
Minimum Operating Temperature- 55 C
Typical Turn-Off Delay Time22 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Package / CaseTDSON-8
Height1.27 mm
Length5.9 mm
Typical Turn-On Delay Time10 ns
Maximum Operating Temperature+ 150 C
Factory Pack Quantity5000
Product CategoryMOSFET
Mounting StyleSMD/SMT
Width5.15 mm
Product TypeMOSFET
ManufacturerInfineon
BrandInfineon Technologies
MXHTS85412999
TARIC8541290000
SeriesOptiMOS 3
RoHS Details
Qg - Gate Charge29 nC
CNHTS8541290000
TradenameOptiMOS
SubcategoryMOSFETs
Channel ModeEnhancement
USHTS8541290095
Fall Time8 ns
Unit Weight0.003527 oz
Part # AliasesSP000676402 BSC6N25NS3GXT BSC600N25NS3GATMA1
Pd - Power Dissipation125 W
TypeOptiMOS 3 Power-Transistor
Vds - Drain-Source Breakdown Voltage250 V
Number of Channels1 Channel
Rise Time10 ns