参数项参数值
参数项参数值
ConfigurationSingle
Forward Transconductance - Min8 S
Transistor PolarityN-Channel
Id - Continuous Drain Current11 A
TechnologySi
Minimum Operating Temperature- 65 C
Length10.4 mm
Rds On - Drain-Source Resistance400 mOhms
Transistor Type1 N-Channel
Maximum Operating Temperature+ 150 C
Typical Turn-Off Delay Time46 ns
Vgs - Gate-Source Voltage- 30 V, + 30 V
Height9.3 mm
JPHTS8541290100
ImageSTMicroelectronics STF11NM80
ManufacturerSTMicroelectronics
CAHTS8541290000
MXHTS85412101
Typical Turn-On Delay Time22 ns
Package / CaseTO-220-3
Width4.6 mm
BrandSTMicroelectronics
SubcategoryMOSFETs
USHTS8541290075
Product CategoryMOSFET
Mounting StyleThrough Hole
TARIC8541210000
PackagingTube
DescriptionMOSFET N-Ch 800 Volt 11 Amp Power MDmesh
Factory Pack Quantity1000
Qg - Gate Charge43.6 nC
RoHS Details
SeriesSTF11NM80
TradenameMDmesh
Product TypeMOSFET
Channel ModeEnhancement
Fall Time15 ns
Unit Weight0.071959 oz
CNHTS8541210000
Pd - Power Dissipation35 W
TypeMOSFET
Vds - Drain-Source Breakdown Voltage800 V
Number of Channels1 Channel
Rise Time17 ns