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商品参数
参数项参数值
参数项参数值
DC Current Gain hFE Max550
Gain Bandwidth Product fT75 MHz
Collector- Base Voltage VCBO80 V
Maximum DC Collector Current2 A
Collector- Emitter Voltage VCEO Max60 V
Continuous Collector Current2 A
TechnologySi
ConfigurationSingle
Transistor PolarityNPN
Collector-Emitter Saturation Voltage300 mV
Emitter- Base Voltage VEBO5 V
DC Collector/Base Gain hfe Min250
KRHTS8541219000
Width1.4 mm
Height0.94 mm
Maximum Operating Temperature+ 150 C
JPHTS8541210101
Minimum Operating Temperature- 55 C
Length2.92 mm
MXHTS85412101
TARIC8541210000
Product CategoryBipolar Transistors - BJT
Package / CaseSuperSOT-3
CNHTS8541210000
Mounting StyleSMD/SMT
CAHTS8541210000
PackagingCut Tape
PackagingMouseReel
PackagingReel
Unit Weight0.001058 oz
RoHS Details
SeriesFSB560A
ImageON Semiconductor / Fairchild FSB560A
BrandON Semiconductor / Fairchild
ManufacturerON Semiconductor
Pd - Power Dissipation500 mW
Part # AliasesFSB560A_NL
Product TypeBJTs - Bipolar Transistors
Factory Pack Quantity3000
SubcategoryTransistors
USHTS8541210095
DescriptionBipolar Transistors - BJT NPN Transistor Low Saturation
Moisture Sensitivity Level1 (Unlimited)