SQS415ENW-T1_GE3

厂牌：VISHAY(威世)

包装：REEL 1

类目：元器件 > 分立器件 > MOSFET

编号：B000053296123

描述：MOSFET -40V -16A 175DEG C 62.5W; Transistor Polarity:P Channel; Continuous Drain Current Id:-16A; Drain Source Voltage Vds:-40V; On Resistance Rds(on):0.013ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2V; Power Dissipation Pd:62.5W; Transistor Case Style:PowerPAK 1212; No. of Pins:8Pins; Operating Temperature Max:175蚓; Product Range:TrenchFET Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019)

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商品参数

参数项参数值

Forward Transconductance - Min30 S

TechnologySi

ConfigurationSingle

Id - Continuous Drain Current16 A

Vgs th - Gate-Source Threshold Voltage1.5 V

Transistor PolarityP-Channel

Rds On - Drain-Source Resistance16.1 mOhms

Transistor Type1 P-Channel TrenchFET Power MOSFET

Typical Turn-Off Delay Time64 ns

Vgs - Gate-Source Voltage- 20 V, + 20 V

Typical Turn-On Delay Time11.8 ns

PackagingMouseReel

PackagingReel

PackagingCut Tape

Qg - Gate Charge82 nC

ImageVishay Semiconductors SQS415ENW-T1_GE3

BrandVishay Semiconductors

Mounting StyleSMD/SMT

Channel ModeEnhancement

Maximum Operating Temperature+ 175 C

Package / CasePowerPAK-1212-8W-8

Minimum Operating Temperature- 55 C

Fall Time16 ns

TARIC8541290000

Unit Weight0.010013 oz

Pd - Power Dissipation62.5 W

DescriptionMOSFET -40V Vds 20V Vgs POWERPAK 1212-8W

Product TypeMOSFET

Factory Pack Quantity3000

SubcategoryMOSFETs

ManufacturerVishay

Vds - Drain-Source Breakdown Voltage40 V

Number of Channels1 Channel

Product CategoryMOSFET

Rise Time3.6 ns

TradenamePowerPAK

USHTS8541290095