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SQ4080EY-T1_GE3

SQ4080EY-T1_GE3

厂牌：VISHAY(威世)
包装：REEL 1
类目：元器件 > 分立器件 > MOSFET
编号：B000053296184
描述：场效应管(MOSFET) 7.1W 150V 18A 1个N沟道
最新价格近期成交30单+
数量价格（含税）
1¥7.2779
100¥6.2778
1250¥5.9778
2500¥5.7778
库存：20交期：3-5Days起订：1增量：1
数量：
X
7.2779（单价）
合计：
￥7.28
商品满500包邮
商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min51 S
TechnologySi
Id - Continuous Drain Current18 A
ConfigurationSingle
Transistor PolarityN-Channel
Vgs th - Gate-Source Threshold Voltage2.5 V
Rds On - Drain-Source Resistance70 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time19.1 ns
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
Typical Turn-On Delay Time11.4 ns
PackagingReel
PackagingCut Tape
MXHTS85412999
Qg - Gate Charge33 nC
ImageVishay / Siliconix SQ4080EY-T1_GE3
KRHTS8541299000
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 175 C
JPHTS8541290100
Channel ModeEnhancement
Package / CaseSO-8
Minimum Operating Temperature- 55 C
CAHTS8541290000
Fall Time2.5 ns
CNHTS8541290000
TARIC8541290000
Unit Weight0.002610 oz
SeriesSQ
Pd - Power Dissipation7.1 W
DescriptionMOSFET N-Channel 150V SO-8
BrandVishay / Siliconix
Product TypeMOSFET
SubcategoryMOSFETs
Factory Pack Quantity2500
Vds - Drain-Source Breakdown Voltage150 V
ManufacturerVishay
Product CategoryMOSFET
Number of Channels1 Channel
USHTS8541290095
Rise Time3.2 ns
TradenameTrenchFET