参数项参数值
参数项参数值
DC Current Gain hFE Max320
Gain Bandwidth Product fT50 MHz
Collector- Base Voltage VCBO- 160 V
Maximum DC Collector Current1 A
Collector- Emitter Voltage VCEO Max- 160 V
Continuous Collector Current- 1 A
ConfigurationSingle
Transistor PolarityPNP
TechnologySi
Emitter- Base Voltage VEBO- 6 V
Width3.9 mm
Height8 mm
Collector-Emitter Saturation Voltage- 1.5 V
DC Collector/Base Gain hfe Min60
JPHTS8541210101
CAHTS8541210000
MXHTS85412101
KRHTS8541219000
RoHS Details
ImageON Semiconductor / Fairchild KSA1013YTA
Mounting StyleThrough Hole
Product CategoryBipolar Transistors - BJT
Package / CaseTO-92-3
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541210000
SubcategoryTransistors
TARIC8541210000
Factory Pack Quantity2000
PackagingAmmo Pack
Product TypeBJTs - Bipolar Transistors
BrandON Semiconductor / Fairchild
Unit Weight0.006349 oz
ManufacturerON Semiconductor
SeriesKSA1013
USHTS8541210095
DescriptionBipolar Transistors - BJT PNP Epitaxial Transistor
Part # AliasesKSA1013YTA_NL
Pd - Power Dissipation900 mW