参数项参数值
参数项参数值
ConfigurationSingle
Transistor PolarityP-Channel
Id - Continuous Drain Current8 A
KRHTS8541299000
TechnologySi
Minimum Operating Temperature- 55 C
JPHTS8541290100
Rds On - Drain-Source Resistance36 mOhms
CAHTS8541290000
DescriptionMOSFET -30V Vds 20V Vgs TSOP-6
Vgs - Gate-Source Voltage- 20 V, + 20 V
ImageVishay Semiconductors SI3417DV-T1-GE3
PackagingMouseReel
PackagingReel
PackagingCut Tape
Package / CaseTSOP-6
BrandVishay Semiconductors
Length3.05 mm
Height1.1 mm
Maximum Operating Temperature+ 150 C
SeriesSI3
Product CategoryMOSFET
Mounting StyleSMD/SMT
Factory Pack Quantity3000
Width1.65 mm
Product TypeMOSFET
RoHS Details
TARIC8541290000
CNHTS8541290000
MXHTS85412999
Qg - Gate Charge50 nC
ManufacturerVishay
TradenameTrenchFET
SubcategoryMOSFETs
USHTS8541290095
Channel ModeEnhancement
Unit Weight0.000705 oz
Pd - Power Dissipation4.2 W
Number of Channels1 Channel