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SQ4940AEY-T1_GE3
厂牌：VISHAY(威世)
包装：REEL 1
类目：元器件 > 分立器件 > MOSFET
编号：B000053296345
描述：场效应管(MOSFET) 4W 40V 8A 2个N沟道
商品参数
参数项参数值
参数项参数值
ConfigurationDual
QualificationAEC-Q101
Forward Transconductance - Min33 S, 33 S
Id - Continuous Drain Current8 A
Transistor PolarityN-Channel
Vgs th - Gate-Source Threshold Voltage1.5 V
TechnologySi
Height1.75 mm
Rds On - Drain-Source Resistance20 mOhms, 20 mOhms
Transistor Type2 N-Channel
Maximum Operating Temperature+ 175 C
BrandVishay Semiconductors
Typical Turn-Off Delay Time20 ns, 20 ns
Minimum Operating Temperature- 55 C
Package / CaseSO-8
Vgs - Gate-Source Voltage- 20 V, + 20 V
CAHTS8541290000
ManufacturerVishay
JPHTS8541290100
SubcategoryMOSFETs
KRHTS8541299000
PackagingMouseReel
PackagingCut Tape
PackagingReel
Typical Turn-On Delay Time8 ns, 8 ns
Factory Pack Quantity2500
RoHS Details
USHTS8541290095
TARIC8541290000
Mounting StyleSMD/SMT
Product TypeMOSFET
Width3.9 mm
ImageVishay Semiconductors SQ4940AEY-T1_GE3
Qg - Gate Charge43 nC, 43 nC
DescriptionMOSFET 40V 8A 4W AEC-Q101 Qualified
MXHTS85412999
Product CategoryMOSFET
SeriesSQ
Channel ModeEnhancement
Unit Weight0.017870 oz
Fall Time9 ns, 9 ns
CNHTS8541290000
Pd - Power Dissipation4 W
TradenameTrenchFET
Vds - Drain-Source Breakdown Voltage40 V
Number of Channels2 Channel
Rise Time13 ns, 13 ns