SQ3418AEEV-T1_GE3

厂牌：VISHAY(威世)

包装：REEL 1

类目：元器件 > 分立器件 > MOSFET

编号：B000053296511

描述：dbm供货查询数据MOSFET N-Chnl 40-V (D-S) AEC-Q101 Qualified

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商品参数

参数项参数值

ConfigurationSingle

QualificationAEC-Q101

Forward Transconductance - Min13 S

Id - Continuous Drain Current8 A

Transistor PolarityN-Channel

Vgs th - Gate-Source Threshold Voltage1.5 V

TechnologySi

Height1.1 mm

Rds On - Drain-Source Resistance26 mOhms

Transistor Type1 N-Channel

Maximum Operating Temperature+ 175 C

BrandVishay Semiconductors

Typical Turn-Off Delay Time12 ns

Length3.05 mm

Minimum Operating Temperature- 55 C

Package / CaseTSOP-6

Vgs - Gate-Source Voltage- 20 V, + 20 V

CAHTS8541290000

ManufacturerVishay

JPHTS8541290100

SubcategoryMOSFETs

KRHTS8541299000

PackagingReel

PackagingCut Tape

Typical Turn-On Delay Time6 ns

Factory Pack Quantity3000

RoHS Details

USHTS8541290095

TARIC8541210000

Mounting StyleSMD/SMT

Product TypeMOSFET

Width1.65 mm

ImageVishay Semiconductors SQ3418AEEV-T1_GE3

Qg - Gate Charge12.4 nC

DescriptionMOSFET N-Chnl 40-V (D-S) AEC-Q101 Qualified

MXHTS85412999

Product CategoryMOSFET

SeriesSQ

Channel ModeEnhancement

Fall Time37 ns

CNHTS8541290000

Pd - Power Dissipation5 W

TradenameTrenchFET

Vds - Drain-Source Breakdown Voltage40 V

Number of Channels1 Channel

Rise Time28 ns