参数项参数值
参数项参数值
ConfigurationSingle
Transistor PolarityN-Channel
Id - Continuous Drain Current21 A
TechnologySi
Vgs th - Gate-Source Threshold Voltage4 V
Minimum Operating Temperature- 55 C
Transistor Type1 N-Channel
Maximum Operating Temperature+ 150 C
Typical Turn-Off Delay Time62 ns
KRHTS8541299000
Vgs - Gate-Source Voltage- 25 V, + 25 V
ImageSTMicroelectronics STB28NM50N
JPHTS8541290100
ManufacturerSTMicroelectronics
CAHTS8541290000
MXHTS85412999
Typical Turn-On Delay Time13.6 ns
Package / CaseTO-263-3
PackagingCut Tape
PackagingMouseReel
PackagingReel
BrandSTMicroelectronics
SubcategoryMOSFETs
USHTS8541290095
Product CategoryMOSFET
Mounting StyleSMD/SMT
TARIC8541290000
DescriptionMOSFET N-Ch 500V 0.135 21A MDmesh II
Factory Pack Quantity1000
Qg - Gate Charge50 nC
RoHS Details
SeriesSTB28NM50N
TradenameMDmesh
Product TypeMOSFET
Channel ModeEnhancement
Fall Time52 ns
Unit Weight0.139332 oz
CNHTS8541290000
Pd - Power Dissipation150 W
TypeN-Channel MDmesh II Power MOSFET
Vds - Drain-Source Breakdown Voltage500 V
Number of Channels1 Channel
Rise Time19 ns