BSC320N20NS3 G

厂牌:Infineon(英飞凌)
包装:REEL 1
类目:元器件 > 分立器件 > MOSFET
编号:B000053298393
描述:N-Channel 200V 36A (Tc) 125W (Tc) Surface Mount PG-TDSON-8-1
最新价格近期成交46单+
数量价格(含税)
1¥7.0779
100¥5.8998
1250¥5.4667
2500¥5.2000
5000¥5.0000
库存:1交期:3-5Days起订:1增量:1
数量:
X
7.0779(单价)
合计:
¥7.08
商品满500包邮
商品参数
参数项参数值
参数项参数值
ConfigurationSingle
KRHTS8541299000
CAHTS8541290000
JPHTS8541290100
Transistor PolarityN-Channel
Id - Continuous Drain Current36 A
Vgs th - Gate-Source Threshold Voltage2 V
TechnologySi
Minimum Operating Temperature- 55 C
Rds On - Drain-Source Resistance27 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time22 ns
ImageInfineon Technologies BSC320N20NS3 G
Vgs - Gate-Source Voltage- 20 V, + 20 V
DescriptionMOSFET N-Ch 200V 36A TDSON-8 OptiMOS 3
Package / CaseTDSON-8
Height1.27 mm
Length5.9 mm
PackagingCut Tape
PackagingMouseReel
PackagingReel
Typical Turn-On Delay Time14 ns
Product CategoryMOSFET
Maximum Operating Temperature+ 150 C
Factory Pack Quantity5000
Mounting StyleSMD/SMT
Product TypeMOSFET
Width5.15 mm
ManufacturerInfineon
BrandInfineon Technologies
TARIC8541290000
MXHTS85412999
RoHS Details
CNHTS8541290000
Qg - Gate Charge22 nC
SubcategoryMOSFETs
Channel ModeEnhancement
USHTS8541290095
Fall Time4 ns
Unit Weight0.003527 oz
Part # AliasesSP000676410 BSC32N2NS3GXT BSC320N20NS3GATMA1
Pd - Power Dissipation125 W
TypeOptiMOS 3 Power Transistor
Vds - Drain-Source Breakdown Voltage200 V
Number of Channels1 Channel
Rise Time9 ns