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BSC047N08NS3 G
厂牌：Infineon(英飞凌)
包装：REEL 1
类目：元器件 > 分立器件 > MOSFET
编号：B000053299197
描述：MOSFET N-CH 80V 100A TDSON-8
商品参数
参数项参数值
参数项参数值
ConfigurationSingle
KRHTS8541299000
Forward Transconductance - Min60 S
JPHTS8541290100
Transistor PolarityN-Channel
Id - Continuous Drain Current100 A
Vgs th - Gate-Source Threshold Voltage2 V
TechnologySi
CAHTS8541290000
DescriptionMOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3
ImageInfineon Technologies BSC047N08NS3 G
Rds On - Drain-Source Resistance3.9 mOhms
Transistor Type1 N-Channel
Minimum Operating Temperature- 55 C
Typical Turn-Off Delay Time44 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Package / CaseTDSON-8
Height1.27 mm
Length5.9 mm
Typical Turn-On Delay Time18 ns
Maximum Operating Temperature+ 150 C
Product CategoryMOSFET
Factory Pack Quantity5000
Mounting StyleSMD/SMT
Width5.15 mm
Product TypeMOSFET
ManufacturerInfineon
BrandInfineon Technologies
SeriesOptiMOS 3
MXHTS85412999
TARIC8541290000
RoHS Details
Qg - Gate Charge69 nC
CNHTS8541290000
TradenameOptiMOS
SubcategoryMOSFETs
Channel ModeEnhancement
USHTS8541290095
Fall Time11 ns
Unit Weight0.006349 oz
Part # AliasesSP000436372 BSC47N8NS3GXT BSC047N08NS3GATMA1
Pd - Power Dissipation125 W
Vds - Drain-Source Breakdown Voltage80 V
Number of Channels1 Channel
Rise Time17 ns