参数项参数值
参数项参数值
Forward Transconductance - Min2.3 S, 2.7 S
ConfigurationDual
Id - Continuous Drain Current1.4 A, - 1.5 A
Transistor PolarityN-Channel, P-Channel
Vgs th - Gate-Source Threshold Voltage1.6 V, - 1.5 V
TechnologySi
Width1.5 mm
Rds On - Drain-Source Resistance113 mOhms, 119 mOhms,
Transistor Type1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time5.8 ns, 14.3 ns
Vgs - Gate-Source Voltage- 20 V, + 20 V
Height1.1 mm
Length3 mm
Typical Turn-On Delay Time3.4 ns, 5 ns
MXHTS85412999
KRHTS8541299000
DescriptionMOSFET SMALL SIGNAL+P-CH
Unit Weight0.000522 oz
Qg - Gate Charge0.6 nC, - 2.4 nC
Package / CaseTSOP-6
JPHTS8541290100
Mounting StyleSMD/SMT
CAHTS8541290000
Minimum Operating Temperature- 55 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
Maximum Operating Temperature+ 150 C
Factory Pack Quantity3000
BrandInfineon Technologies
ImageInfineon Technologies BSL316C H6327
Channel ModeEnhancement
SeriesBSL316
RoHS Details
CNHTS8541290000
Product TypeMOSFET
TARIC8541290000
Fall Time1 ns, 7.5 ns
ManufacturerInfineon
Product CategoryMOSFET
SubcategoryMOSFETs
Pd - Power Dissipation500 mW
Part # AliasesSP001101010 BSL316CH6327XTSA1
USHTS8541290095
Vds - Drain-Source Breakdown Voltage30 V, - 30 V
Number of Channels2 Channel
Rise Time2.3 ns, 6.5 ns