参数项参数值
参数项参数值
Forward Transconductance - Min20 S
TechnologySi
ConfigurationSingle
Id - Continuous Drain Current3.6 A
Transistor PolarityN-Channel
Vgs th - Gate-Source Threshold Voltage450 mV
Rds On - Drain-Source Resistance24 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time420 ns
MXHTS85412999
Vgs - Gate-Source Voltage- 8 V, + 8 V
KRHTS8541299000
Typical Turn-On Delay Time7 ns
Qg - Gate Charge17.8 nC
Package / CaseSOT-23-3
CNHTS8541290000
JPHTS8541290100
CAHTS8541290000
Mounting StyleSMD/SMT
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingReel
PackagingMouseReel
ImageON Semiconductor NTR3C21NZT1G
Fall Time4.67 us
TARIC8541290000
RoHS Details
Factory Pack Quantity3000
BrandON Semiconductor
Unit Weight0.000282 oz
ManufacturerON Semiconductor
DescriptionMOSFET 20 V SANYO T6 NCH IN
Product TypeMOSFET
Product CategoryMOSFET
Pd - Power Dissipation1.56 W
SubcategoryMOSFETs
USHTS8541290095
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels1 Channel
Rise Time14 ns