参数项参数值
参数项参数值
ConfigurationSingle
Forward Transconductance - Min5.4 S
Id - Continuous Drain Current1.6 A
Transistor PolarityN-Channel
Vgs th - Gate-Source Threshold Voltage620 mV
TechnologySi
Width1.3 mm
CNHTS8541290000
Rds On - Drain-Source Resistance88 mOhms
Transistor Type1 N-Channel
Length2.15 mm
KRHTS8541299000
Vgs - Gate-Source Voltage- 12 V, + 12 V
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Package / CaseSOT-323-3
Height1 mm
TARIC8541290000
MXHTS85412999
Product TypeMOSFET
SubcategoryMOSFETs
ProductMOSFET Small Signal
Minimum Operating Temperature- 55 C
CAHTS8541290000
JPHTS8541290100
PackagingMouseReel
PackagingReel
PackagingCut Tape
BrandDiodes Incorporated
ManufacturerDiodes Incorporated
Factory Pack Quantity3000
DescriptionMOSFET 0.35W 28V 1.6A
ImageDiodes Incorporated DMN3150LW-7
Channel ModeEnhancement
RoHS Details
Product CategoryMOSFET
SeriesDMN31
Unit Weight0.000176 oz
USHTS8541290095
Pd - Power Dissipation350 mW
Vds - Drain-Source Breakdown Voltage28 V
Number of Channels1 Channel