参数项参数值
参数项参数值
Forward Transconductance - Min9.4 S
ConfigurationSingle
Id - Continuous Drain Current3.2 A
Transistor PolarityP-Channel
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Rds On - Drain-Source Resistance59 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time27 ns
Vgs - Gate-Source Voltage- 8 V, + 8 V
Typical Turn-On Delay Time6.2 ns
Mounting StyleSMD/SMT
Factory Pack Quantity5000
CNHTS8541210000
MXHTS85412101
KRHTS8541219000
Unit Weight0.000045 oz
Qg - Gate Charge12 nC
JPHTS8541210101
Package / CaseDFN-1010-3
CAHTS8541210000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingMouseReel
PackagingCut Tape
PackagingReel
Channel ModeEnhancement
Product TypeMOSFET
Product CategoryMOSFET
TARIC8541210000
ManufacturerNexperia
DescriptionMOSFET 12V P-channel Trench MOSFET
BrandNexperia
ImageNexperia PMXB65UPEZ
Fall Time17 ns
RoHS Details
SubcategoryMOSFETs
Pd - Power Dissipation1.07 W
USHTS8541210075
Part # Aliases934067151147
Vds - Drain-Source Breakdown Voltage12 V
Number of Channels1 Channel
Rise Time22 ns