参数项参数值
参数项参数值
Length3.3 mm
ConfigurationSingle
Height0.8 mm
Transistor PolarityN-Channel
TechnologySi
Vgs th - Gate-Source Threshold Voltage2 V
Factory Pack Quantity2000
Rds On - Drain-Source Resistance13.5 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time19.7 ns
Package / CasePowerDI3333-8
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time6.5 ns
ManufacturerDiodes Incorporated
Minimum Operating Temperature- 55 C
Product TypeMOSFET
BrandDiodes Incorporated
RoHS Details
Mounting StyleSMD/SMT
ImageDiodes Incorporated DMT10H015LFG-7
Maximum Operating Temperature+ 150 C
Width3.3 mm
PackagingMouseReel
PackagingReel
PackagingCut Tape
Product CategoryMOSFET
Qg - Gate Charge33.3 nC
SubcategoryMOSFETs
DescriptionMOSFET 100V N-Ch Enh FET 20Vgss 33.3nC 2.0W
TradenamePowerDI
SeriesDMT10
Channel ModeEnhancement
Unit Weight0.002540 oz
Fall Time8.1 ns
Pd - Power Dissipation2 W
Vds - Drain-Source Breakdown Voltage100 V
Number of Channels1 Channel
Rise Time7 ns