参数项参数值
参数项参数值
ConfigurationDual
Forward Transconductance - Min600 ms
Id - Continuous Drain Current590 mA
Transistor PolarityN-Channel
Vgs th - Gate-Source Threshold Voltage450 mV
TechnologySi
Rds On - Drain-Source Resistance670 mOhms
Transistor Type2 N-Channel
Typical Turn-Off Delay Time12 ns
Vgs - Gate-Source Voltage- 8 V, + 8 V
KRHTS8541299000
Typical Turn-On Delay Time4 ns
Package / CaseDFN-1010-6
MXHTS85412999
Unit Weight0.000046 oz
Qg - Gate Charge1.05 nC
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
RoHS Details
Channel ModeEnhancement
Factory Pack Quantity5000
BrandNexperia
PackagingMouseReel
PackagingCut Tape
PackagingReel
CNHTS8541290000
ManufacturerNexperia
Product CategoryMOSFET
ImageNexperia PMDXB550UNEZ
Product TypeMOSFET
TARIC8541290000
SubcategoryMOSFETs
DescriptionMOSFET 30V Dual N-Channel Trench MOSFET
Fall Time3 ns
USHTS8541290095
Part # Aliases934069326147
Pd - Power Dissipation4.03 W
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels2 Channel
Rise Time7 ns