参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current12.3 A
Transistor PolarityN-Channel
Vgs th - Gate-Source Threshold Voltage3 V
Rds On - Drain-Source Resistance70 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time7.3 ns
Vgs - Gate-Source Voltage- 20 V, + 20 V
MXHTS85412999
QualificationAEC-Q101
Typical Turn-On Delay Time3.9 ns
KRHTS8541299000
RoHS Details
CNHTS8541290000
Qg - Gate Charge8.5 nC
DescriptionMOSFET N-channel 80 V 98 mOhm MOSFET
Package / CaseLFPAK56-5
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 175 C
Minimum Operating Temperature- 55 C
CAHTS8541290000
JPHTS8541290100
Fall Time3.7 ns
BrandNexperia
TARIC8541290000
PackagingReel
PackagingCut Tape
PackagingMouseReel
ImageNexperia BUK7Y98-80EX
SubcategoryMOSFETs
Product CategoryMOSFET
Factory Pack Quantity1500
ManufacturerNexperia
Product TypeMOSFET
Pd - Power Dissipation37 W
Part # Aliases934067426115
USHTS8541290095
Vds - Drain-Source Breakdown Voltage80 V
Number of Channels1 Channel
Rise Time3.5 ns