参数项参数值
参数项参数值
DC Current Gain hFE Max250
Gain Bandwidth Product fT30 MHz
ConfigurationSingle
Collector- Base Voltage VCBO400 V
QualificationAEC-Q101
Maximum DC Collector Current2 A
Collector- Emitter Voltage VCEO Max180 V
Continuous Collector Current1 A
Transistor PolarityNPN
TechnologySi
Height1 mm
Emitter- Base Voltage VEBO6 V
Minimum Operating Temperature- 55 C
Length3 mm
Maximum Operating Temperature+ 150 C
JPHTS8541290100
Package / CaseSOT-23-3
ManufacturerNexperia
TARIC8541290000
Factory Pack Quantity3000
DC Collector/Base Gain hfe Min50
BrandNexperia
CAHTS8541290000
SubcategoryTransistors
KRHTS8541219000
USHTS8541210075
PackagingMouseReel
PackagingCut Tape
PackagingReel
RoHS Details
Mounting StyleSMD/SMT
Product TypeBJTs - Bipolar Transistors
Width1.4 mm
Product CategoryBipolar Transistors - BJT
DescriptionBipolar Transistors - BJT 180V 1A NPN HI VLTGE LO VCESAT TRANSISTOR
MXHTS85412999
Unit Weight0.000275 oz
CNHTS8541210000
Part # Aliases934064195215
Pd - Power Dissipation300 mW