参数项参数值
参数项参数值
DC Current Gain hFE Max300 at 500 mA, 2 V
Gain Bandwidth Product fT70 MHz
ConfigurationSingle
Collector- Base Voltage VCBO40 V
QualificationAEC-Q101
Maximum DC Collector Current10 A
Collector- Emitter Voltage VCEO Max40 V
Continuous Collector Current4 A
Transistor PolarityNPN
TechnologySi
Emitter- Base Voltage VEBO6 V
Length4.6 mm
Package / CaseSOT-89-3
CAHTS8541210000
Height1.6 mm
Minimum Operating Temperature- 65 C
JPHTS8541210101
BrandNexperia
ManufacturerNexperia
SubcategoryTransistors
KRHTS8541299000
DC Collector/Base Gain hfe Min300
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541210000
Factory Pack Quantity4000
DescriptionBipolar Transistors - BJT TRANS BISS TAPE-13
Product TypeBJTs - Bipolar Transistors
Maximum Operating Temperature+ 150 C
USHTS8541290075
Mounting StyleSMD/SMT
Width2.6 mm
RoHS Details
ImageNexperia PBSS4540X,135
MXHTS85412101
Product CategoryBipolar Transistors - BJT
Unit Weight0.035274 oz
CNHTS8541210000
Part # Aliases934057105135
Pd - Power Dissipation550 mW