参数项参数值
参数项参数值
DC Current Gain hFE Max390
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO50 V
Maximum DC Collector Current200 mA
Collector- Emitter Voltage VCEO Max50 V
Continuous Collector Current100 mW
TechnologySi
ConfigurationSingle
Transistor PolarityNPN
Collector-Emitter Saturation Voltage200 mV
Emitter- Base Voltage VEBO5 V
DC Collector/Base Gain hfe Min180
QualificationAEC-Q101
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
SubcategoryTransistors
Package / CaseDFN-1006B-3
Mounting StyleSMD/SMT
PackagingCut Tape
PackagingMouseReel
PackagingReel
RoHS Details
Unit Weight0.000024 oz
ImageNexperia 2PC4617RMB,315
Factory Pack Quantity10000
Pd - Power Dissipation250 mW
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT 51 V mA NPN General Purpose Tran
BrandNexperia
Part # Aliases934065898315
Product CategoryBipolar Transistors - BJT
ManufacturerNexperia