参数项参数值
参数项参数值
Gain Bandwidth Product fT100 MHz
ConfigurationSingle
Collector- Base Voltage VCBO- 50 V
QualificationAEC-Q101
Maximum DC Collector Current2 A
Collector- Emitter Voltage VCEO Max- 50 V
Continuous Collector Current- 2 A
Transistor PolarityPNP
TechnologySi
Emitter- Base Voltage VEBO- 7 V
Maximum Operating Temperature+ 175 C
Minimum Operating Temperature- 55 C
JPHTS8541290100
Package / CaseSOT-23-3
Collector-Emitter Saturation Voltage- 390 mV
Factory Pack Quantity3000
TARIC8541210000
DC Collector/Base Gain hfe Min80
SubcategoryTransistors
CAHTS8541290000
KRHTS8541299000
BrandNexperia
ManufacturerNexperia
Product TypeBJTs - Bipolar Transistors
Mounting StyleSMD/SMT
RoHS Details
ImageNexperia PBSS5350THR
Product CategoryBipolar Transistors - BJT
SeriesPBSS5350
DescriptionBipolar Transistors - BJT Bipolar Discretes SOT23
MXHTS85412999
USHTS8541290095
Unit Weight0.003951 oz
CNHTS8541290000
Part # Aliases934071078215
Pd - Power Dissipation1.44 W