参数项参数值
参数项参数值
DC Current Gain hFE Max800
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO50 V
Collector- Emitter Voltage VCEO Max45 V
Continuous Collector Current100 mA
TechnologySi
ConfigurationSingle
Transistor PolarityNPN
Collector-Emitter Saturation Voltage400 mV
Emitter- Base Voltage VEBO6 V
DC Collector/Base Gain hfe Min420
QualificationAEC-Q101
MXHTS85412101
ImageNexperia BC847CQAZ
KRHTS8541219000
Mounting StyleSMD/SMT
JPHTS8541210101
Maximum Operating Temperature+ 150 C
Package / CaseDFN-1010D-3
CAHTS8541210000
CNHTS8541210000
PackagingReel
PackagingCut Tape
PackagingMouseReel
TARIC8541210000
Unit Weight0.000040 oz
RoHS Details
Pd - Power Dissipation440 mW
DescriptionBipolar Transistors - BJT TRANS BIPOLAR
Part # Aliases934069068147
BrandNexperia
Product TypeBJTs - Bipolar Transistors
Factory Pack Quantity5000
SubcategoryTransistors
ManufacturerNexperia
Product CategoryBipolar Transistors - BJT
USHTS8541210095
Moisture Sensitivity Level1 (Unlimited)