参数项参数值
参数项参数值
DC Current Gain hFE Max450
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO50 V
ConfigurationDual
Maximum DC Collector Current100 mA
Collector- Emitter Voltage VCEO Max45 V
Continuous Collector Current100 mA
Transistor PolarityNPN
TechnologySi
Emitter- Base Voltage VEBO6 V
Collector-Emitter Saturation Voltage400 mV
DC Collector/Base Gain hfe Min200
QualificationAEC-Q101
Mounting StyleSMD/SMT
CNHTS8541210000
Factory Pack Quantity5000
Unit Weight0.000043 oz
Package / CaseDFN-1010B-6
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingReel
Product TypeBJTs - Bipolar Transistors
Product CategoryBipolar Transistors - BJT
DescriptionBipolar Transistors - BJT TRANS BIPOLAR
TARIC8541210000
ManufacturerNexperia
BrandNexperia
ImageNexperia PMP4501QASZ
RoHS Details
SubcategoryTransistors
Pd - Power Dissipation350 mW
USHTS8541210075
Part # Aliases934660012147