参数项参数值
参数项参数值
DC Current Gain hFE Max250
Gain Bandwidth Product fT80 MHz
Collector- Base Voltage VCBO- 50 V
Maximum DC Collector Current- 500 mA
Collector- Emitter Voltage VCEO Max- 45 V
Continuous Collector Current- 500 mA
TechnologySi
ConfigurationSingle
Transistor PolarityPNP
Collector-Emitter Saturation Voltage- 700 mV
Emitter- Base Voltage VEBO- 5 V
DC Collector/Base Gain hfe Min100
QualificationAEC-Q101
Mounting StyleSMD/SMT
Package / CaseSOT-23-3
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingReel
PackagingCut Tape
Unit Weight0.000313 oz
TARIC8541210000
RoHS Details
Pd - Power Dissipation800 mW
Factory Pack Quantity3000
ImageNexperia BC807K-16R
DescriptionBipolar Transistors - BJT TRANS BIPOLAR
USHTS8541210095
Part # Aliases934660051215
BrandNexperia
ManufacturerNexperia
Product TypeBJTs - Bipolar Transistors
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
Moisture Sensitivity Level1 (Unlimited)