参数项参数值
参数项参数值
ConfigurationSingle
Width5 mm
Forward Transconductance - Min88 S
CNHTS8541290000
Id - Continuous Drain Current100 A
Transistor PolarityN-Channel
Vgs th - Gate-Source Threshold Voltage2.7 V
TechnologySi
Length6 mm
Rds On - Drain-Source Resistance4.1 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time22 ns
MXHTS85423901
Vgs - Gate-Source Voltage- 20 V, + 20 V
PackagingCut Tape
PackagingMouseReel
PackagingReel
Mounting StyleSMD/SMT
Typical Turn-On Delay Time8 ns
Height1 mm
Package / CaseVSON-CLIP-8
Product CategoryMOSFET
Product TypeMOSFET
Maximum Operating Temperature+ 150 C
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
TARIC8542399000
Qg - Gate Charge48 nC
ManufacturerTexas Instruments
SubcategoryMOSFETs
RoHS Details
BrandTexas Instruments
Channel ModeEnhancement
ImageTexas Instruments CSD19502Q5B
Factory Pack Quantity2500
USHTS8541290095
DescriptionMOSFET N-CH 3.4mOhm 80V Power MOSFET
Fall Time7 ns
Unit Weight0.004751 oz
Pd - Power Dissipation3.2 W
TradenameNexFET
Vds - Drain-Source Breakdown Voltage80 V
Number of Channels1 Channel
Rise Time6 ns
Moisture Sensitivity Level1 (Unlimited)