参数项参数值
参数项参数值
ConfigurationSingle
Forward Transconductance - Min3.4 S
Id - Continuous Drain Current3.6 A
Transistor PolarityP-Channel
Vgs th - Gate-Source Threshold Voltage1.05 V
TechnologySi
Rds On - Drain-Source Resistance260 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time1154 ns
Vgs - Gate-Source Voltage- 20 V, + 20 V
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingReel
Mounting StyleSMD/SMT
Typical Turn-On Delay Time474 ns
SubcategoryMOSFETs
Product CategoryMOSFET
Product TypeMOSFET
DescriptionMOSFET
Minimum Operating Temperature- 55 C
Qg - Gate Charge1.02 nC
ManufacturerTexas Instruments
Factory Pack Quantity3000
SeriesCSD25501F3
BrandTexas Instruments
RoHS Details
Channel ModeEnhancement
ImageTexas Instruments CSD25501F3
Fall Time945 ns
Unit Weight0.000011 oz
Pd - Power Dissipation500 mW
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels1 Channel
Rise Time428 ns