IPD180N10N3GATMA1

IPD180N10N3GATMA1

厂牌：Infineon(英飞凌)

包装：REEL 1

类目：元器件 > 分立器件 > MOSFET

编号：B000053309432

描述：Trans MOSFET N-CH 100V 43A 3-Pin(2+Tab) DPAK T/R

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商品参数

参数项参数值

参数项参数值

Forward Transconductance - Min20 S

ConfigurationSingle

Id - Continuous Drain Current43 A

Transistor PolarityN-Channel

Vgs th - Gate-Source Threshold Voltage2.7 V

TechnologySi

Width6.22 mm

Rds On - Drain-Source Resistance18 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time19 ns

Height2.3 mm

Vgs - Gate-Source Voltage- 20 V, + 20 V

Typical Turn-On Delay Time12 ns

MXHTS85412999

RoHS Details

Length6.5 mm

ImageInfineon Technologies IPD180N10N3GATMA1

KRHTS8541299000

Mounting StyleSMD/SMT

Qg - Gate Charge25 nC

Package / CaseTO-252-3

JPHTS8541290100

USHTS8541290095

DescriptionMOSFET MV POWER MOS

CAHTS8541290000

Minimum Operating Temperature- 55 C

Maximum Operating Temperature+ 175 C

PackagingCut Tape

PackagingMouseReel

PackagingReel

TARIC8541290000

CNHTS8541290000

Channel ModeEnhancement

ManufacturerInfineon

SubcategoryMOSFETs

Factory Pack Quantity2500

Fall Time5 ns

Unit Weight0.139332 oz

BrandInfineon Technologies

Product CategoryMOSFET

Product TypeMOSFET

Pd - Power Dissipation71 W

Part # AliasesIPD180N10N3 G SP000900132

Vds - Drain-Source Breakdown Voltage100 V

Number of Channels1 Channel

Rise Time12 ns