参数项参数值
参数项参数值
Maximum Gate Emitter Voltage20 V
Collector- Emitter Voltage VCEO Max650 V
TechnologySi
ConfigurationSingle
Collector-Emitter Saturation Voltage1.65 V
PackagingTube
BrandSTMicroelectronics
Mounting StyleThrough Hole
Maximum Operating Temperature+ 175 C
Package / CaseTO-247-3
Minimum Operating Temperature- 55 C
Continuous Collector Current at 25 C50 A
RoHS Details
Unit Weight0.215171 oz
TARIC8541290000
Continuous Collector Current Ic Max50 A
Pd - Power Dissipation167 W
Factory Pack Quantity600
DescriptionIGBT Transistors PTD IGBT & IPM
ImageSTMicroelectronics STGWA30HP65FB2
Product CategoryIGBT Transistors
Product TypeIGBT Transistors
SubcategoryIGBTs
ManufacturerSTMicroelectronics
USHTS8541290095