SQJA86EP-T1_GE3

厂牌：VISHAY(威世)

包装：REEL 1

类目：元器件 > 分立器件 > MOSFET

编号：B000053321918

描述：SQJA86EP Series 80 V 30 A Automotive N-Channel Mosfet - PowerPAK® SO-8

下载数据手册

商品参数

参数项参数值

ConfigurationSingle

Id - Continuous Drain Current30 A

Transistor PolarityN-Channel

Vgs th - Gate-Source Threshold Voltage1.5 V

TechnologySi

Rds On - Drain-Source Resistance15.5 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time23 ns

Height1.04 mm

Vgs - Gate-Source Voltage- 20 V, + 20 V

Width5.13 mm

QualificationAEC-Q101

Typical Turn-On Delay Time10 ns

MXHTS85411001

Length6.15 mm

KRHTS8541109000

Mounting StyleSMD/SMT

Package / CasePowerPAK-SO-8-4

Qg - Gate Charge32 nC

Product CategoryMOSFET

JPHTS8541100901

CAHTS8541100090

Minimum Operating Temperature- 55 C

Maximum Operating Temperature+ 175 C

CNHTS8541210000

RoHS Details

ImageVishay Semiconductors SQJA86EP-T1_GE3

Channel ModeEnhancement

BrandVishay Semiconductors

PackagingReel

PackagingCut Tape

PackagingMouseReel

SeriesSQ

ManufacturerVishay

SubcategoryMOSFETs

Fall Time24 ns

USHTS8541100080

Unit Weight0.017870 oz

Factory Pack Quantity3000

Product TypeMOSFET

DescriptionMOSFET 80V Vds 30A Id AEC-Q101 Qualified

Pd - Power Dissipation48 W

Vds - Drain-Source Breakdown Voltage80 V

Number of Channels1 Channel

Rise Time3 ns